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Switching of perpendicular magnetization by spin-orbit torques in the absence of external magnetic fields

机译:通过自旋轨道转矩切换垂直磁化强度   没有外部磁场

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摘要

Magnetization switching by current-induced spin-orbit torques (SOTs) is ofgreat interest due to its potential applications for ultralow-power memory andlogic devices. In order to be of technological interest, SOT effects need toswitch ferromagnets with a perpendicular (out-of-plane) magnetization.Currently, however, this typically requires the presence of an in-planeexternal magnetic field, which is a major obstacle for practical applications.Here we report for the first time on SOT-induced switching of out-of-planemagnetized Ta/Co20Fe60B20/TaOx structures without the need for any externalmagnetic fields, driven by in-plane currents. This is achieved by introducing alateral structural asymmetry into our devices during fabrication. The resultsshow that a new field-like SOT is induced by in-plane currents in suchasymmetric structures. The direction of the current-induced effective fieldcorresponding to this new field-like SOT is out-of-plane, which facilitatesswitching of perpendicular magnets. This work thus provides a pathway towardsbias-field-free SOT devices.
机译:由于电流感应的自旋轨道转矩(SOT)引起的磁化切换非常受关注,因为它有可能用于超低功耗存储器和逻辑设备。为了引起技术关注,SOT效应需要切换具有垂直(平面外)磁化强度的铁磁体,但是目前,这通常需要存在面内外部磁场,这是实际应用中的主要障碍在此,我们首次报道了SOT诱导的平面外磁化Ta / Co20Fe60B20 / TaOx结构的转换,而无需由平面内电流驱动的任何外部磁场。这是通过在制造过程中将侧面结构不对称性引入我们的器件来实现的。结果表明,在这种不对称结构中,平面电流会引起新的场状SOT。电流感应有效磁场的方向对应于这种新的场状SOT,其方向为平面外,这有利于垂直磁体的切换。因此,这项工作提供了通往无偏置场的SOT设备的途径。

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